STGF4M65DF2
Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.6 V (typ.) @ IC = 4 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Applications
- Motor control
- UPS
- PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Sc12850_no_tab
E (3)
Order code STGF4M65DF2
Table 1: Device summary Marking
G4M65DF2
Package TO-220FP
Packing Tube
November...
