STGF4M65DF2 Datasheet, STMicroelectronics

* 6 µs of short-circuit withstand time
* VCE(sat) = 1.6 V (typ.) @ IC = 4 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resistanc.

* Motor control
* UPS
* PFC Description This device is an IGBT developed using an advanced proprietary trenc.

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-.