Datasheet Summary
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
- production data
TO-220FP Figure 1: Internal schematic diagram
C (2)
G (1)
Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.6 V (typ.) @ IC = 4 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Applications
- Motor control
- UPS
- PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are...