STMicroelectronics STGP30H60DFB
600V 30A high speed IGBT
| Part No. | STGP30H60DFB |
|---|---|
| Datasheet | STGP30H60DFB Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 30A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
● Tight parameter distribution
● Safe paralleling
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Very fast soft recovery antiparallel diode
APPLICATIONS
● Photovoltaic inverters● High frequency converters
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB30H60DFB STGP30H60DFB DS10468 - Rev 4 - May 2025 For further information, contact your local STMicroelectronics sales office. STGB30H60DFB, STGP30H60DFB Electrical ratings 1 Electrical ratings Table 1.
