Download STGW25H120F2 Datasheet PDF
STGW25H120F2 datasheet preview
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STGW25H120F2 Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 2.1 V (typ.) @ IC = 25 A
  • 5 µs minimum short circuit withstand time at
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance

STGW25H120F2 Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling...