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STGW25H120F2 Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data 72      .

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 2.1 V (typ. ) @ IC = 25 A.
  • 5 µs minimum short circuit withstand time at TJ=150 °C.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance Figure 1. Internal schematic diagram C (2) G (1) SC12850 E (3).