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STGW30H60DF Datasheet 30A high speed trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Download the STGW30H60DF datasheet PDF. This datasheet also includes the STGB30H60DF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGB30H60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.

Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.

Overview

TAB 3 1 D²PAK TAB STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data 3 2.

Key Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short circuit rated.
  • Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1).

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