STGW30H60DFB - 30A high speed HB series IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGW30H60DFB
Manufacturer	STMicroelectronics
File Size	678.93 KB
Description	30A high speed HB series IGBT
Datasheet	STGW30H60DFB Datasheet
Additional preview pages of the STGW30H60DFB datasheet.

Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: May 31, 2019 |