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STGW30H60DFB - 30A high speed HB series IGBT

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STMicroelectronics

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STGW30H60DFB 30A high speed HB series IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGW30H60DFB

Datasheet Details

Part number	STGW30H60DFB
Manufacturer	STMicroelectronics
File Size	678.93 KB
Description	30A high speed HB series IGBT
Datasheet	STGW30H60DFB Datasheet
Additional preview pages of the STGW30H60DFB datasheet.

Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: May 31, 2019 |