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STGW30H60DF - 30A high speed trench gate field-stop IGBT

Download the STGW30H60DF datasheet PDF. This datasheet also covers the STGB30H60DF variant, as both devices belong to the same 30a high speed trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.

Key Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short circuit rated.
  • Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB30H60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

More Datasheets from STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TAB 3 1 D²PAK TAB STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data 3 2 1 TO-220FP Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short circuit rated • Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1) Applications • Inverter • UPS • PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.