Full PDF Text Transcription for STGW30M65DF2 (Reference)
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STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of...
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roduction data Figure 1: Internal schematic diagram Features 6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 50 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are esse
STGW30M65DF2 Datasheet
