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STGWA25H120DF2 Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Download the STGWA25H120DF2 datasheet PDF. This datasheet also includes the STGW25H120DF2 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGW25H120DF2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.

Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGW25H120DF2, STGWA25H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 3 2 1 TO-247 3 12 TO-247 long leads Product status links STGW25H120DF2.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 2.1 V (typ. ) @ IC = 25 A.
  • 5 μs minimum short circuit withstand time at TJ = 150 °C.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast recovery antiparallel diode.

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