STGWA25H120F2 Datasheet | STMicroelectronics

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed - production data 72 72ORQJOHDGV Features - Maximum junction temperature: TJ = 175 °C - High speed switching series - Minimized tail current - VCE(sat) = 2.1 V (typ.) @ IC = 25 A - 5 µs minimum short circuit withstand time at TJ=150 °C - Tight parameters distribution - Safe paralleling - Low thermal resistance Figure 1. Internal schematic diagram C (2) G (1) SC12850 E (3) Applications - Uninterruptible power supply - Welding machines - Photovoltaic inverters - Power factor correction - High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGW25H120F2...