STMicroelectronics STGWA25H120F2
The device is part of the H series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.| Part No. | STGWA25H120F2 |
|---|---|
| Datasheet | STGWA25H120F2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 25A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● VCE(sat) = 2.1 V (typ.) @ IC = 25 A
● 5 μs minimum short circuit withstand time at TJ = 150 °C
● Safe paralleling
● Low thermal resistance
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● High frequency converters
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. DS10211 - Rev 5 - February 2025 For further information, contact your local STMicroelectronics sales office. STGW25H120F2, STGWA25H120F2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1...
