STGWA15H120DF2 Datasheet | STMicroelectronics

STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 3 2 1 TO-247 3 2 1 TO-247 long leads Features - Maximum junction temperature: TJ = 175 °C - High speed switching series - Minimized tail current - VCE(sat) = 2.1 V @ IC = 15 A - 5 μs minimum short circuit withstand time at TJ = 150 °C - Safe paralleling - Low thermal resistance - Very fast recovery antiparallel diode Applications - Photovoltaic inverters - Uninterruptible power supply - Welding - Power factor correction - High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGW15H120DF2 STGWA15H120DF2 Product summary Order code STGW15H120DF2 Marking G15H120DF2 Package...