• Part: STGWA25H120DF2
  • Description: Trench gate field-stop IGBT
  • Manufacturer: STMicroelectronics
  • Size: 911.18 KB
Download STGWA25H120DF2 Datasheet PDF
STMicroelectronics
STGWA25H120DF2
STGWA25H120DF2 is Trench gate field-stop IGBT manufactured by STMicroelectronics.
- Part of the STGW25H120DF2 comparator family.
STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 3 2 1 TO-247 3 12 TO-247 long leads Product status links STGW25H120DF2 STGWA25H120DF2 Features - Maximum junction temperature: TJ = 175 °C - High speed switching series - Minimized tail current - VCE(sat) = 2.1 V (typ.) @ IC = 25 A - 5 μs minimum short circuit withstand time at TJ = 150 °C - Safe paralleling - Low thermal resistance - Very fast recovery antiparallel diode Applications - Photovoltaic inverters - Uninterruptible power supply - Welding - Power factor correction - High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product summary Order code STGW25H120DF2 Marking G25H120DF2 Package...