STGWA20HP65FB2
STGWA20HP65FB2 is IGBT manufactured by STMicroelectronics.
Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package
C(2, TAB) G(1)
Features
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
- Co-packaged protection diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
Applications
- Welding
- Power factor correction
E(3)
Description
NG1E3C2T
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Product status link STGWA20HP65FB2
Product summary
Order code
Marking
G20HP65FB2
Package
TO-247 long leads
Packing
Tube
DS13334
- Rev 1
- May 2020 For further information contact your local STMicroelectronics sales...
