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STGWA15M120DF3 - Trench gate field-stop IGBT

Download the STGWA15M120DF3 datasheet PDF. This datasheet also covers the STGW15M120DF3 variant, as both devices belong to the same trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.

Key Features

  • 10 µs of short-circuit withstand time.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 15 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and fast recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW15M120DF3-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STGWA15M120DF3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STGWA15M120DF3. For precise diagrams, and layout, please refer to the original PDF.

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data    72 72ORQJOHDGV Figure 1.Internal sche...

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production data    72 72ORQJOHDGV Figure 1.Internal schematic diagram & RU7$% *  Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low

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