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STGWA75H65DFB2 - IGBT

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STMicroelectronics

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STGWA75H65DFB2 IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGWA75H65DFB2

Datasheet Details

Part number	STGWA75H65DFB2
Manufacturer	STMicroelectronics
File Size	555.45 KB
Description	IGBT
Datasheet	STGWA75H65DFB2 Datasheet
Additional preview pages of the STGWA75H65DFB2 datasheet.

Product details

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

Features

C(2, TAB).
Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.55 V(typ. ) @ IC = 75 A.
Very fast and soft recovery co-packaged diode.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient.

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Published: Apr 26, 2020 |