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STMicroelectronics Electronic Components Datasheet

STGWA75H65DFB2 Datasheet

IGBT

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STGWA75H65DFB2
Datasheet
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT
in a TO247 long leads package
Features
C(2, TAB)
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
Applications
G(1)
E(3)
Welding
Power factor correction
UPS
Solar inverters
Chargers
NG1E3C2T
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current
values, as well as in terms of reduced switching energy. A very fast soft recovery
diode is co-packaged in antiparallel with the IGBT. The result is a product specifically
designed to maximize efficiency for a wide range of fast applications.
Product status link
STGWA75H65DFB2
Product summary
Order code
STGWA75H65DFB2
Marking
G75H65DFB2
Package
TO-247 long leads
Packing
Tube
DS13215 - Rev 2 - February 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STGWA75H65DFB2 Datasheet

IGBT

No Preview Available !

STGWA75H65DFB2
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
ICP (1)
Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C)
Gate-emitter voltage
VGE Transient gate-emitter voltage (tp ≤ 10 μs)
Continuous forward current at TC = 25 °C
IF
Continuous forward current at TC = 100 °C
IFP(1)
Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C)
PTOT
Total power dissipation at TC = 25 °C
TSTG
Storage temperature range
TJ Operating junction temperature range
1. Defined by design, not subject to production test.
Symbol
RthJC
RthJA
Table 2. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
650
115
71
225
±20
±30
110
65
195
357
-55 to 150
-55 to 175
Unit
V
A
V
A
W
°C
Value
0.42
0.49
50
Unit
°C/W
DS13215 - Rev 2
page 2/15


Part Number STGWA75H65DFB2
Description IGBT
Maker STMicroelectronics
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STGWA75H65DFB2 Datasheet PDF






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