STGWA75H65DFB2 Datasheet | STMicroelectronics

Features C(2, TAB) - Maximum junction temperature: TJ = 175 °C - Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A - Very fast and soft recovery co-packaged diode - Minimized tail current - Tight parameter distribution - Low thermal resistance - Positive VCE(sat) temperature coefficient Applications G(1) E(3) - Welding - Power factor correction - UPS - Solar inverters - Chargers NG1E3C2T Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA75H65DFB2 Product summary Order code Marking G75H65DFB2 Package TO-247 long leads Packing Tube DS13215 - Rev 2 - February 2020 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C...