STGWA75H65DFB2
Datasheet
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT
in a TO‑247 long leads package
Features
C(2, TAB)
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
Applications
G(1)
E(3)
• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers
NG1E3C2T
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current
values, as well as in terms of reduced switching energy. A very fast soft recovery
diode is co-packaged in antiparallel with the IGBT. The result is a product specifically
designed to maximize efficiency for a wide range of fast applications.
Product status link
STGWA75H65DFB2
Product summary
Order code
STGWA75H65DFB2
Marking
G75H65DFB2
Package
TO-247 long leads
Packing
Tube
DS13215 - Rev 2 - February 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
