STGWA75H65DFB2
Features
C(2, TAB)
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
Applications
G(1) E(3)
- Welding
- Power factor correction
- UPS
- Solar inverters
- Chargers
NG1E3C2T
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Product status link STGWA75H65DFB2
Product summary
Order code
Marking
G75H65DFB2
Package
TO-2...
