STH10NK60ZFI Datasheet N-CHANNEL Power MOSFET

Manufacturer: STMicroelectronics

STH10NK60ZFI n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STH10NK60ZFI
Manufacturer	STMicroelectronics
File Size	361.64 KB
Description	N-CHANNEL Power MOSFET
Download	STH10NK60ZFI Download (PDF)

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Overview

STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65 Ω-10ATO-220/FP/D 2PAK/I2PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH™ Power MOSFET R DS(on) < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 Ω Ω Ω Ω Ω Ω ID 10 10 10 10 10 10 A A A A A A Pw 115 W 115 W 35 W 115 W 35 W 156 W TYPE STB10NK60Z STB10NK60Z-1 STH10NK60ZFI STP10NK60Z STP10NK60ZFP STW10NK60Z s s s s s s VDSS 600 600 600 600 600 600 V V V V V V 3 2 1 1 2 3 TO-220 ISOWATT218 TO-220FP TYPICAL RDS(on) = 0.

Key Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/16 STP10NK60Z/F.

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