STH160N4LF6-2 Datasheet, STMicroelectronics

Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W
* RDS(on) * Qg industry benchmark
* Extremely low on-resistance RDS(on)
* Logic lev.

* Switching applications 'Ć7$% Description *Ć This device is an N-channel Power MOSFET th developed using t.

*Ć This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6ĆĆ $0Y Order cod.