Datasheet Summary
Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ F3 Power MOSFET in a H²PAK-6 package
- production data
Features
H2PAK-6
Figure 1. Internal schematic diagram
Order code STH245N75F3-6
VDS 75 V
RDS(on) max. ID 3.0 mΩ 180 A
- Designed for automotive applications and AEC-Q101 qualified
- Conduction losses reduced
- Low profile, very low parasitic inductance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Order code STH245N75F3-6
Table 1. Device...