STH315N10F7-6
Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STH315N10F7-2 STH315N10F7-6 Product summary Order code STH315N10F7-2 Marking 315N10F7 Package H²PAK-2 Packing Tape and reel Order code STH315N10F7-6 Marking 315N10F7 Package H²PAK-6 Packing Tape and reel DS9870 - Rev 6 - March 2025 For further information, contact your local STMicroelectronics sales office.
Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness ID 180 A G(1) G(1)
