STH315N10F7-6 Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Part: STH315N10F7-6
- Manufacturer: STMicroelectronics (official site)
- Size: 792.64 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STH315N10F7-2 | Automotive-grade N-channel 100V 180A Power MOSFET |
| STH310N10F7-2 | N-CHANNEL Power MOSFET |
| STH310N10F7-6 | N-CHANNEL Power MOSFET |
| STH300NH02L-6 | Automotive-grade N-channel Power MOSFET |
| STH30N65DM6-7AG | Automotive-grade N-channel Power MOSFET |
STH315N10F7-6 Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. STH315N10F7-2, STH315N10F7-6 Electrical ratings 1 Electrical ratings Table 1. ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current...