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STH315N10F7-2 Datasheet Automotive-grade N-channel 100v 180a Power MOSFET

Manufacturer: STMicroelectronics

Overview: STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ.

General Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Product status STH315N10F7-2 STH315N10F7-6 Product summary Order code STH315N10F7-2 Marking 315N10F7 Package H²PAK-2 Packing Tape and reel Order code STH315N10F7-6 Marking 315N10F7 Package H²PAK-6 Packing Tape and reel DS9870 - Rev 6 - March 2025 For further information, contact your local STMicroelectronics sales office.

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Key Features

  • TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 180 A G(1) G(1).

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