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STH315N10F7-6 - Automotive-grade N-channel 100V 180A Power MOSFET

This page provides the datasheet information for the STH315N10F7-6, a member of the STH315N10F7-2 Automotive-grade N-channel 100V 180A Power MOSFET family.

Datasheet Summary

Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 180 A G(1) G(1).

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Datasheet preview – STH315N10F7-6

Datasheet Details

Part number STH315N10F7-6
Manufacturer STMicroelectronics
File Size 792.64 KB
Description Automotive-grade N-channel 100V 180A Power MOSFET
Datasheet download datasheet STH315N10F7-6 Datasheet
Additional preview pages of the STH315N10F7-6 datasheet.

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Full PDF Text Transcription

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STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages Features TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.
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