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STH315N10F7-6 - Automotive-grade N-channel 100V 180A Power MOSFET

Download the STH315N10F7-6 datasheet PDF. This datasheet also covers the STH315N10F7-2 variant, as both devices belong to the same automotive-grade n-channel 100v 180a power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 180 A G(1) G(1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH315N10F7-2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STH315N10F7-2 Automotive-grade N-channel 100V 180A Power MOSFET
STH310N10F7-2 N-CHANNEL Power MOSFET
STH310N10F7-6 N-CHANNEL Power MOSFET
STH300NH02L-6 Automotive-grade N-channel Power MOSFET
STH30N65DM6-7AG Automotive-grade N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages Features TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.