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STH36N60DM6-7AG - N-channel Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.

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STH36N60DM6-7AG Datasheet Automotive-grade N-channel 600 V, 0.084 Ω typ., 29 A MDmesh™ DM6 Power MOSFET in an H²PAK-7 package TAB Order code VDS RDS(on) max. ID STH36N60DM6-7AG 600 V 0.099 Ω 29 A 7 1 H2PAK-7 Drain(TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTABZ Product status link STH36N60DM6-7AG Product summary Order code STH36N60DM6-7AG Marking 36N60DM6 Package H²PAK-7 Packing Tape and reel • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely dv/dt ruggedness • Zener-protected • Tab-leads creepage distance 4.5 mm typ.