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STH47N60DM6-2AG Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STH47N60DM6-2AG Datasheet Automotive-grade N-channel 600 V, 70 mΩ typ.

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Product status link STH47N60DM6-2AG Product summary Order code STH47N60DM6-2AG Marking 47N60DM6 Package H²PAK-2 Packing Tape and reel DS12261 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code STH47N60DM6-2AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A.
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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