STH410N4F7-2AG
STH410N4F7-2AG is N-channel Power MOSFET manufactured by STMicroelectronics.
STH410N4F7-2AG, STH410N4F7-6AG
Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
- production data
Figure 1: Internal schematic diagram
Features
Order code
STH410N4F7-2AG 40 V
STH410N4F7-6AG
RDS(on) max.
1.1 mΩ
ID 200 A
PTOT 365 W
- Designed for automotive applications and AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low...
