• Part: STH47N60DM6-2AG
  • Description: N-channel Power MOSFET
  • Manufacturer: STMicroelectronics
  • Size: 637.93 KB
Download STH47N60DM6-2AG Datasheet PDF
STMicroelectronics
STH47N60DM6-2AG
STH47N60DM6-2AG is N-channel Power MOSFET manufactured by STMicroelectronics.
Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh™ DM6 Power MOSFET in an H²PAK-2 package 23 1 H2PAK-2 D(TAB) G(1) S(2,3) NCHG1DTABS23TZ Features Order code STH47N60DM6-2AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A - AEC-Q101 qualified - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low...