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STHI07N50 Datasheet, STMicroelectronics

STHI07N50 transistors equivalent, high injection n-channel enhancement mode power mos transistors.

STHI07N50 Avg. rating / M : 1.0 rating-17

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STHI07N50 Datasheet

Features and benefits

a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the dra.

Application


* AUTOMOTIVE IGNITION
* DRIVERS FOR SOLENOIDS AND RELAYS N - channel High Injection POWER MOS transistors (lGBT.

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