Full PDF Text Transcription for STHI10N50 (Reference)
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STHI10N50. For precise diagrams, and layout, please refer to the original PDF.
STHI10N50 STHI10N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY DATA TYPE STHI10N50 STHI10N50FI Voss 500 V 500 V 10 10 A 10 A • H...
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NARY DATA TYPE STHI10N50 STHI10N50FI Voss 500 V 500 V 10 10 A 10 A • HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY • FAST TURN-OFF: tf < 1.5 P.s APPLICATIONS: • MOTOR CONTROL N - channel High Injection POWER MOS transistors (IGBT) which feature a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to switching motor control applications in consumer equipment such as washing machines and tumble dryers and industrial equipment motor control.
STHI10N50 Datasheet
