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STI18NM60N - N-channel Power MOSFET

General Description

These devices are made using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK Features Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.