STI18N65M2 Datasheet | STMicroelectronics

STI18N65M2, STP18N65M2 N-channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2 Power MOSFET in I²PAK and TO-220 packages - production data Features I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STI18N65M2 STP18N65M2 VDS 650V RDS(on) max ID 0.33Ω 12 A - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected Applications - Switching applications - LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Order code STI18N65M2 STP18N65M2 Table 1. Device summary Marking Package 18N65M2 I2PAK TO-220 Packaging Tube January 2015 This is information on a product...