STI18NM60N - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STI18NM60N
Manufacturer	STMicroelectronics
File Size	539.36 KB
Description	N-channel Power MOSFET
Datasheet	STI18NM60N Datasheet
Additional preview pages of the STI18NM60N datasheet.

STI18NM60N Product details

Description

These devices are made using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.

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Published: Oct 15, 2016 |