STI24NM60N Datasheet - STMicroelectronics

N-channel MOSFET

STI24NM60N Features

* Order codes STF24NM60N STI24NM60N STP24NM60N STW24NM60N

* TAB VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max. < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 17 A 1 3 2 3 12 17 A 17 A 17 A TO-220FP I2PAK 100% avalanche tested Low input capacitance and gate charge Low gate input re

STI24NM60N General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most.

STI24NM60N Datasheet (559.48 KB)