Datasheet Details
| Part number | STI24NM60N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 310.02 KB |
| Description | N-Channel MOSFET |
| Datasheet | STI24NM60N-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | STI24NM60N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 310.02 KB |
| Description | N-Channel MOSFET |
| Datasheet | STI24NM60N-INCHANGE.pdf |
|
|
|
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±30 V 17 A 68 A 125 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W STI24NM60N isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STI24NM60N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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STI24NM60N | N-channel MOSFET | STMicroelectronics |
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