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STI24NM60N - N-channel MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order codes STF24NM60N STI24NM60N STP24NM60N STW24NM60N.
  • TAB VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max. < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 17 A 1 3 2 3 12 17 A 17 A 17 A TO-220FP I2PAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 2 1 3 TO-220 TO-247.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF24NM60N, STI24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 Ω , 17 A MDmesh™ II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 Features Order codes STF24NM60N STI24NM60N STP24NM60N STW24NM60N ■ ■ ■ TAB VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max. < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 17 A 1 3 2 3 12 17 A 17 A 17 A TO-220FP I2PAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 2 1 3 TO-220 TO-247 Applications ■ Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.