Datasheet Summary
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Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V
- 50 A
- 0.026 Ω
Preliminary Data
General Features
VCS(ON) 1.3 V
- IC 50 A
RCS(ON) 0.026
High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch up to 150 kHz Ultra low Ciss Low dynamic VCS(ON)
1 2 3 4
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I4PAC-4L
Applications
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Internal schematic diagrams
Industrial converters Welding
Description
The STI50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STI50DE100 is designed for use in industrial converters...