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STK24N4LLH5 - N-channel Power MOSFET

Datasheet Summary

Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Features

  • Type STK24N4LLH5.
  • VDSS 40 V RDS(on) max < 0.0055 Ω RDS(on).
  • Qg 96 nC.
  • mΩ Ultra low top and bottom junction to case thermal resistance RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK.

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Datasheet Details

Part number STK24N4LLH5
Manufacturer STMicroelectronics
File Size 371.63 KB
Description N-channel Power MOSFET
Datasheet download datasheet STK24N4LLH5 Datasheet
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www.DataSheet4U.com STK24N4LLH5 N-channel 40 V, 0.0046 Ω , 24 A, PolarPAK® STripFET™V Power MOSFET Preliminary Data Features Type STK24N4LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 40 V RDS(on) max < 0.0055 Ω RDS(on)*Qg 96 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK® Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.
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