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STMicroelectronics Electronic Components Datasheet

STL20NM20N Datasheet

N-CHANNEL MOSFET

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STL20NM20N
N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT™
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
Table 1: General Features
Figure 1: Package
TYPE
VDSS
RDS(on)
ID
STL20NM20N
200 V
< 0.105 Ω 20 A
WORLDWIDE LOWEST GATE CHARGE
)TYPICAL RDS(on) = 0.088Ω
t(sIMPROVED DIE-TO-FOOTPRINT RATIO
cVERY LOW PROFILE PACKAGE (1mm MAX)
uVERY LOW THERMAL RESISTANCE
dLOW GATE RESISTANCE
ro )LOW INPUT CAPACITANCE
P t(sHIGH dv/dt and AVALANCHE CAPABILITIES
lete ucDESCRIPTION
dThis 200V MOSFET with a new advanced layout
so robrings all unique advantages of MDmesh technol-
b Pogy to lower voltages. The device exhibits world-
wide lowest gate charge for any given on-
- O teresistance.Its use is therefore ideal as primary
) leswitch in isolated DC-DC converters for Telecom
t(s oand Computer applications.Used in combination
swith secondary-side low-voltage STripFETTM prod-
c bucts, it contributes to reducing losses and boosting
u Oefficiency.The new PowerFLAT™ package allows
d -a significant reduction in board space without com-
ro )promising performance.
PowerFlat (6x5)
(Chip Scale Package)
Figure 2: Internal Schematic Diagram
lete P uct(sAPPLICATIONS
dThe MDmeshTM family is very suitable for increas-
so roing power density allowing system miniaturization
and higher efficiencies
Ooblete PTable 2: Order Codes
ObsSALES TYPE
MARKING
PACKAGE
PACKAGING
STL20NM20N
L20NM20N
PowerFLAT™(6x5)
TAPE & REEL
January 2006
Rev. 6
1/10


STMicroelectronics Electronic Components Datasheet

STL20NM20N Datasheet

N-CHANNEL MOSFET

No Preview Available !

STL20NM20N
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
200 V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
200 V
VGS Gate- source Voltage
± 30 V
ID (1)
Drain Current (continuous) at TC = 25°C (Steady State)
Drain Current (continuous) at TC = 100°C
20
12.3
A
A
IDM (3) Drain Current (pulsed)
80 A
PTOT (2) Total Dissipation at TC = 25°C (Steady State)
2.5 W
PTOT (1)
t(s)dv/dt (4)
Total Dissipation at TC = 25°C (Steady State)
Derating Factor (2)
Peak Diode Recovery voltage slope
cTable 4: Thermal Data
duSymbol
Parameter
ro )Rthj-c Thermal Resistance Junction-case
P t(sRthj-pcb (2) Thermal Resistance Junction-pcb
te cTj Max. Operating Junction Temperature
le uTstg Storage Temperature
so rodTable 5: Avalanche Characteristics
b PSymbol
Parameter
- O teIAS Avalanche Current, Repetitive or Not-Repetitive
) le(pulse width limited by Tj max)
t(s soEAS Single Pulse Avalanche Energy
c b(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
80 W
0.02 W/°C
10 V/ns
Typ.
35
Max.
1.56
50
-55 to 150
Unit
°C/W
°C/W
°C
Max. Value
20
380
Unit
A
mJ
rodu - OELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
P t(s)Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
lete ucV(BR)DSS Drain-source
dBreakdown Voltage
ID = 1 mA, VGS = 0
200
bso ProIDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C
1
10
O teIGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
±100
oleVGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
3 45
ObsRDs(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10 A
0.088 0.105
Unit
V
µA
µA
nA
V
Ω
2/10


Part Number STL20NM20N
Description N-CHANNEL MOSFET
Maker STMicroelectronics
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