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STL20NM20N
N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT™ ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
www.datasheet4u.com Table 1: General
Features
VDSS 200 V RDS(on) < 0.105 Ω ID 20 A
Figure 1: Package
TYPE STL20NM20N
s s s s s s s s
WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE LOW GATE RESISTANCE LOW INPUT CAPACITANCE HIGH dv/dt and AVALANCHE CAPABILITIES
PowerFlat (6x5) (Chip Scale Package)
DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.
STL20NM20N Datasheet
