STL20NM20N
Features
VDSS 200 V RDS(on) < 0.105 Ω ID 20 A
Figure 1: Package
TYPE STL20NM20N s s s s s s s s
WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE LOW GATE RESISTANCE LOW INPUT CAPACITANCE HIGH dv/dt and AVALANCHE CAPABILITIES
Power Flat (6x5) (Chip Scale Package)
DESCRIPTION
This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Tele and puter applications.Used in bination with secondary-side low-voltage STrip FETTM products, it contributes to reducing losses and boosting efficiency.The new Power FLAT™ package allows a significant reduction in board space without promising performance.
Figure 2: Internal Schematic Diagram
APPLICATIONS The MDmesh TM family is very suitable for...
