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STMicroelectronics Electronic Components Datasheet

STL22NF10 Datasheet

N-CHANNEL MOSFET

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STL22NF10
N-CHANNEL 100V - 0.055 - 22A PowerFLAT™
LOW GATE CHARGE STripFET™ II MOSFET
TYPE
VDSS
RDS(on)
ID
STL22NF10
100 V <0.060 22 A(1)
s TYPICAL RDS(on) = 0.055
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE (1mm MAX)
s VERY LOW THERMAL RESISTANCE
s VERY LOW GATE CHARGE
DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "STripFET™"
technology. The resulting transistor shows extremely low
on-resistance and minimal gate charge. The new
PowerFLAT™ package allows a significant reduction in
board space without compromising performance.
PowerFLAT(5x5)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY ISOLATED DC-DC
CONVERTERS
s TELECOM AND AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(2)
ID(2)
IDM(3)
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C (Steady State)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Ptot(2)
Ptot(1)
Total Dissipation at TC = 25°C (Steady State)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (5) Peak Diode Recovery voltage slope
EAS (6) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
February 2003
.
Value
100
100
± 20
5.3
3.8
22
4
70
0.03
16
82
-55 to 150
Unit
V
V
V
A
A
A
W
W
W/°C
V/ns
mJ
°C
1/8


STMicroelectronics Electronic Components Datasheet

STL22NF10 Datasheet

N-CHANNEL MOSFET

No Preview Available !

STL22NF10
THERMAL DATA
Rthj-F (*)Thermal Resistance Junction-Foot (Drain)
Rthj-pcb(4) Thermal Operating Junction-pcb
www.datas(h*)eMeto4uun.cteodmon FR-4 board (t [ 10 sec.)
1.8
31.5
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
°C/W
°C/W
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (7)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 11 A
Min.
2
Typ. Max.
0.055 0.060
Unit
V
DYNAMIC
Symbol
gfs (7)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 20 V
ID = 11 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
16
885
130
56
Max.
Unit
S
pF
pF
pF
2/8


Part Number STL22NF10
Description N-CHANNEL MOSFET
Maker STMicroelectronics
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STL22NF10 Datasheet PDF






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