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STMicroelectronics Electronic Components Datasheet

STL27N15 Datasheet

N-CHANNEL MOSFET

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STL27N15
N-CHANNEL 150V - 0.045 - 27A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STL15N15
150 V <0.060 27 A(1)
s TYPICAL RDS(on) = 0.045
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE (1mm MAX)
s VERY LOW THERMAL RESISTANCE
s VERY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique "STripFET™" process has specifically been
designed to minimize input capacitance and gate charge.
It’s therefore suitable as primary switch in advanced high
efficiency, high frequency isolated DC-DC converter for
telecom an computer application. The new
PowerFLAT™ package allows e significant reduction in a
board space without compromising performance.
APPLICATIONS
s HIGH-EFFICIENCY ISOLATED DC-DC
CONVERTERS
s TELECOM AND BATTERY CHARGER
ADAPTOR
s SYNCHRONOUS RECTIFICATION
Ordering Information
SALES TYPE
STL27N15
MARKING
L27N15
PowerFLAT™(6x5)
INTERNAL SCHEMATIC DIAGRAM
PACKAGE
PowerFLAT
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C (Steady State)
ID Drain Current (continuous) at TC = 100°C
IDM(3)
Ptot(2)
Drain Current (pulsed)
Total Dissipation at TC = 25°C (Steady State)
Ptot(1)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (5) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Operating Junction Temperature
Value
150
150
± 20
6
4
24
4
80
0.03
TBD
-55 to 150
June 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
Unit
V
V
V
A
A
A
W
W
W/°C
V/ns
°C
1/6


STMicroelectronics Electronic Components Datasheet

STL27N15 Datasheet

N-CHANNEL MOSFET

No Preview Available !

STL27N15
THERMAL DATA
Rthj-F Thermal Resistance Junction-Foot (Drain)
Rthj-pcb(2) Thermal Operating Junction-pcb
www.datas.heet4u.com
1.56
31.2
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
°C/W
°C/W
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (6)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 3 A
Min.
1
Typ. Max.
0.045 0.060
Unit
V
DYNAMIC
Symbol
gfs (6)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 50 V
ID = 5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
TBD
TBD
TBD
TBD
Max.
Unit
S
pF
pF
pF
2/6


Part Number STL27N15
Description N-CHANNEL MOSFET
Maker STMicroelectronics
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