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STMicroelectronics Electronic Components Datasheet

STL28NF3LL Datasheet

N-CHANNEL MOSFET

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STL28NF3LL
N-CHANNEL 30V - 0.0055- 28A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STL28NF3LL
30 V < 0.0065 28 A
s TYPICAL RDS(on) = 0.0055
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allows a significant reduction in
board space without compromising performance.
PowerFLAT™(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(#)
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(#) Limited by Wire Bonding
November 2002
Value
30
30
± 16
28
17.5
112
80
0.64
2
–55 to 150
(1) Starting Tj = 25°C, ID = 14A, VDD = 18V
Unit
V
V
V
A
A
A
W
W/°C
J
°C
1/6


STMicroelectronics Electronic Components Datasheet

STL28NF3LL Datasheet

N-CHANNEL MOSFET

No Preview Available !

STL28NF3LL
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-pcb (#) Thermal Resistance Junction-ambient Max
www.datas(h*e) eWt4huen.cmomounted on 1inch² FR4 Board, 2oz of Cu, t 10 sec.
1.56
31.2
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
±100
°C/W
°C/W
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 14A
Min.
1
Typ. Max.
0.0055 0.0065
0.0065 0.0095
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V, ID = 14 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
32
2780
890
195
Max.
Unit
S
pF
pF
pF
2/6


Part Number STL28NF3LL
Description N-CHANNEL MOSFET
Maker STMicroelectronics
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