STL28NF3LL Datasheet | STMicroelectronics

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STrip FET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new Power FLAT™ package allows a significant reduction in board space without promising performance. Power FLAT™(5x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM s APPLICATIONS DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(#) IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 16 28 17.5 112 80 0.64 2 - 55 to 150 (1) Starting Tj = 25°C, ID = 14A, VDD = 18V Unit V V V A A A W W/°C J °C (q ) Pulse width limited by safe operating area (#) Limited by Wire Bonding November 2002 1/6 THERMAL DATA Rthj-case Rthj-pcb (#) Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 31.2 °C/W °C/W (- ) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec. .. ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 16V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA n A ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 14A Min. 1 0.0055 0.0065 0.0065 0.0095 Typ. Max. Unit V Ω Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15...