Datasheet4U Logo Datasheet4U.com

STL320N4LF8 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.

It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.

Key Features

  • Order code STL320N4LF8 VDS 40 V.
  • MSL1 grade.
  • 175 °C operating temperature.
  • 100% avalanche tested RDS(on) max. 0.8 mΩ ID 360 A.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STL39002Z IRED Siemens Semiconductor
STL3NK40 Power MOSFET ST Microelectronics
STL-S3 Stratum 3 Timing Module Connor-Winfield
STL-S3E Stratum 3E Timing Module Connor-Winfield
STL03S03F (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter Superworld Electronics

Other Datasheets by STMicroelectronics

Part Number Description
STL325N4LF8AG Automotive N-channel Power MOSFET
STL300N4LF8 N-channel Power MOSFET
STL305N4LF8AG Automotive N-channel Power MOSFET
STL30N10F7 N-CHANNEL POWER MOSFET
STL30NF3LL N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STL320N4LF8 Datasheet N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View GADG09062022 Features Order code STL320N4LF8 VDS 40 V • MSL1 grade • 175 °C operating temperature • 100% avalanche tested RDS(on) max. 0.8 mΩ ID 360 A Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.