Datasheet Summary
N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package
123 4
876 5
567 8
PowerFLAT 3.3x3.3 HV
D(5, 6, 7, 8)
G(4)
Features
Order code
RDS(on ) max.
650 V
1.8 Ω
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
ID 2.3 A
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high...