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STL3NM60N Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STL3NM60N Datasheet N-channel 600 V, 1.5 Ω typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package 123 4 876 5 567 8 PowerFLAT 3.3x3.

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS RDS(on ) max. STL3NM60N 600 V 1.8 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance ID 2.2 A.

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