Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
- Order code STL64DN4F7AG
VDS 40 V
RDS(on) max. 8.5 mΩ
ID 40 A
1 S2
Drain on rear side
2 G2
3 S1
4 G1
8 D2
7
6 D1
5.
- AEC-Q101 qualified.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness.
- Wettable flank package.
STL64DN4F7AG Datasheet
