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STL64DN4F7AG - Automotive-grade dual N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STL64DN4F7AG VDS 40 V RDS(on) max. 8.5 mΩ ID 40 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package.

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STL64DN4F7AG Datasheet Automotive-grade dual N-channel, 40 V, 7.0 mΩ typ., 40 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package Features Order code STL64DN4F7AG VDS 40 V RDS(on) max. 8.5 mΩ ID 40 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5 • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.