STL64DN4F7AG - Automotive-grade dual N-channel Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	STL64DN4F7AG
Manufacturer	STMicroelectronics
File Size	435.19 KB
Description	Automotive-grade dual N-channel Power MOSFET
Datasheet	STL64DN4F7AG-STMicroelectronics.pdf

STL64DN4F7AG Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STL64DN4F7AG VDS 40 V RDS(on) max. 8.5 mΩ ID 40 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5.
AEC-Q101 qualified.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.
Wettable flank package.

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Published: Feb 18, 2023 |