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STL7N6F7 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STL7N6F7 VDS 60 V RDS(on) max 0.025 Ω ID 7A.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL7N6F7 N-channel 60 V, 0.021 Ω typ., 7 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 2x2 package Datasheet - preliminary data 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Figure 1: Internal schematic diagram 1(D) 2(D) 3(G) DS Features Order code STL7N6F7 VDS 60 V RDS(on) max 0.025 Ω ID 7A  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.