STMicroelectronics STL7N6F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.FEATURES
Order code STL7N6F7 VDS 60 V RDS(on) max 0.025 Ω ID 7A● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
6(D) 5(D) 4(S) Bottom view AM11269v1 Order code STL7N6F7 Marking ST7N Table 1: Device summary Package PowerFLAT™ 2x2 Packing Tape and reel August 2015 DocID028257 Rev 1 This is preliminary information on a new product now in development or under