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STL7NM60N - N-channel Power MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0.90 Ω ID 5.8 A(1) 1. The value is rated according Rthj-case.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet preview – STL7NM60N

Datasheet Details

Part number STL7NM60N
Manufacturer STMicroelectronics
File Size 387.87 KB
Description N-channel Power MOSFET
Datasheet download datasheet STL7NM60N Datasheet
Additional preview pages of the STL7NM60N datasheet.

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Full PDF Text Transcription

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STL7NM60N N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5 MDmesh™ II Power MOSFET Features Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0.90 Ω ID 5.8 A(1) 1. The value is rated according Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 87 11 5 4 12 14 1 PowerFLAT™ 5x5 Figure 1.
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