STL7N6F7 Datasheet PDF - STMicroelectronics N-channel Power MOSFET Specs

STL7N6F7 - N-channel Power MOSFET

Datasheet Summary

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STL7N6F7 VDS 60 V RDS(on) max 0.025 Ω ID 7A.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

Datasheet Details

Part number	STL7N6F7
Manufacturer	STMicroelectronics
File Size	536.00 KB
Description	N-channel Power MOSFET
Datasheet	STL7N6F7 Datasheet
Additional preview pages of the STL7N6F7 datasheet.

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Full PDF Text Transcription

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STL7N6F7 N-channel 60 V, 0.021 Ω typ., 7 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 2x2 package Datasheet - preliminary data 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Figure 1: Internal schematic diagram 1(D) 2(D) 3(G) DS Features Order code STL7N6F7 VDS 60 V RDS(on) max 0.025 Ω ID 7A  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Published: Oct 24, 2016 |