STL8DN10LF3 Overview
Description
This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C maximum junction temperature
- 100% avalanche rated
- Wettable flank package Figure
