STL9N60M2 Datasheet, STMicroelectronics

Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.86 Ω 4.8 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate i.

* Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Description This device.

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest .