STLD110N10F7 - N-Channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STLD110N10F7
Manufacturer	STMicroelectronics
File Size	1.89 MB
Description	N-Channel Power MOSFET
Datasheet	STLD110N10F7 Datasheet
Additional preview pages of the STLD110N10F7 datasheet.

Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code VDS RDS(on) max. STLD110N10F7 100 V 6 mΩ.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness ID 107 A D(5, 6, 7, 8).

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Published: Oct 1, 2023 |