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STLD110N10F7 - N-Channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code VDS RDS(on) max. STLD110N10F7 100 V 6 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 107 A D(5, 6, 7, 8).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Prerelease product(s) STLD110N10F7 Datasheet N-channel 100 V, 5 mΩ typ., 107 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 dual side cooling package Features Order code VDS RDS(on) max. STLD110N10F7 100 V 6 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 107 A D(5, 6, 7, 8) Applications • Switching applications G(4) S(1, 2, 3) AM15540v4 Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.