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STLT29 - N-CHANNEL LOW THRESHOLD POWER MOS TRANSISTORS

Download the STLT29 datasheet PDF. This datasheet also covers the STLT30 variant, as both devices belong to the same n-channel low threshold power mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (STLT30-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STLT29 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STLT29. For precise diagrams, and layout, please refer to the original PDF.

STLT30 STLT29 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS ADVANCE DATA TYPE STLT30 STLT29 Voss 60 V 50 V ROS(on) 0.080 0.080 10 25 A 25 A • LOGICAL L...

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T30 STLT29 Voss 60 V 50 V ROS(on) 0.080 0.080 10 25 A 25 A • LOGICAL LEVEL ( + 5V) CMOSmL COMPATIBLE INPUT • HIGH INPUT IMPEDANCE • ULTRA FAST SWITCHING , N - channel enhancement mode POWER MOS field effect transistors. The low input voltage - logic level - and easy drive make these devices ideal for automotive and industrial applications. Typical uses are in relay and actuator driving in the automotive enviroment. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS VOS VOGR V GS 10 10 10M Ptot Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc= 25

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