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STL100N8F7 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • PowerFLAT 5x6 Order code V DS RDS(on) max STL100N8F7 80 V 6.1 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 100 A PTOT 120 W D(5, 6, 7, 8) 8 76 5.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL100N8F7 Datasheet N-channel 80 V, 5.2 mΩ typ., 100 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features PowerFLAT 5x6 Order code V DS RDS(on) max STL100N8F7 80 V 6.1 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 100 A PTOT 120 W D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S(1, 2, 3) 12 34 Top View NG4D5678S123 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.