Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
- PowerFLAT 5x6
Order code
V DS
RDS(on) max
STL100N8F7
80 V
6.1 mΩ.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness
ID 100 A
PTOT 120 W
D(5, 6, 7, 8)
8 76 5.
STL100N8F7 Datasheet
